CM100DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI IGBT MODULES

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
180
VGE=20
(V)
14
13
160
15
12
140
120
100
11
80
60
10
40
9
20
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
9
VGE = 15V
8
Tj = 25°C
7
Tj = 125°C
6
5
4
3
2
1
0
0
40 80 120 160 200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Tj = 125°C
Tj = 25°C
10²
7
5
3
2
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
180
160
140
120
100
80
60
40
20
Tj = 25°C
Tj = 125°C
0
0
5
10
15
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 200A
6
IC = 100A
4
IC = 40A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
Cies
10¹
7
5
3
2
10⁰
7
Coes
5
3
2
VGE = 0V
10^–1
10^–1 2 3 5 7 10⁰ 2 3
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb.2004