CM100DU-24F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 100 Amperes/1200 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
9.5
180
VGE = 20V
160
15
140
11
9
120
10
100
8.5
80
60
40
8
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 200A
2
IC = 100A
IC = 40A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
0
Cres
10^–1
10^–1
COLLECTOR-EMITTER VOLTAGE VCE (V)
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
Tj = 25°C
Tj = 125°C
2
1.5
1
0.5
0
0
40 80 120 160 200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 Tj = 25°C
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0.5 1 1.5 2 2.5 3 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
tf
3
td(off)
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
10¹
23
td(on)
tr
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Sep.2000