CM100DU-12F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj=25°C
VGE=20V
160
15
11
10
9.5
9
120
80
8.5
40
8
7.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 200A
2
IC = 100A
1
IC = 40A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
Cies
2
10¹
7
5
3
2
10⁰
7
5
3
2 _{VGE = 0V}
Coes
Cres
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
MITSUBISHI IGBT MODULES
CM100DU-12F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
2
1.5
1
0.5
Tj = 25°C
Tj = 125°C
0
0
40 80 120 160 200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
Tj = 25°C
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
td(off)
3
2
tf
10²
7
5
td(on)
3
2
10¹
7
tr
5
3
2
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3Ω
Tj = 125°C
10⁰_{100 2 3 5 7101 2 3 5 7102 2 3 5 7103}
COLLECTOR CURRENT IC (A)
Sep.2000