BCR8PM-20 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS
3
2 VGM = 10V PG(AV) = 0.5W
10¹
7
5
3
2
VGT = 1.5V
PGM = 5W
IGM = 2A
10⁰
7
5
3
2
10^–1
7
5
IFGT I
10¹ 2 3
IRGT I, IRGT III
VGD = 0.2V
5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10³
7
5
NO FINS
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
10¹2 3 5 710²2 3 5 710³2 3 5 710⁴2 3 5 7 10⁵
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
IRGT III
2
10²
IRGT I , IFGT I
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
16
14
12 ^360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 _LOADS
6
4
2
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
Feb.1999