BCR12UM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

GATE CHARACTERISTICS
3
2
VGM = 10V
PG(AV) = 0.5W
10¹
PGM = 5W
7
5
IGM = 2A
3 _{VGT = 1.5V}
2
10⁰
7
5
3
2
10^–1
7
5
IFGT I , IRGT I , IRGT III
VGD = 0.2V
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
32
28
24 ^360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
IRGT I , IRGT III
3
2
10²
7
IFGT I
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 _INDUCTIVE
LOADS
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
Feb.1999