M6MGB160S4BVP Datasheet, PDF (26/30 Pages) Mitsubishi Electric Semiconductor – 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI LSIs
M6MGB/T160S4BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
ABSOLUTE MAXIMUM RATINGS
Symbol
S-Vcc
VI
VO
Pd
Ta
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating
temperature
Conditions
With respect to GND
With respect to GND
With respect to GND
Ta=25 C
W-version
Ratings
-0.5* ~ +4.6
-0.5* ~ S-Vcc + 0.5
0 ~ S-Vcc
700
Units
V
mW
- 20 ~ +85
C
Tstg Storage temperature
- 65 ~ +150
C
* -3.0V in case of AC (Pulse width<= 30ns)
DC ELECTRICAL CHARACTERISTICS
( S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Min Typ Max
VIH High-level input voltage
2.2
S-Vcc+0.3V
VIL Low-level input voltage
VOH1 High-level output voltage 1 IOH= -0.5mA
VOH2 High-level output voltage 2 IOH= -0.05mA
-0.3 *
2.4
S-Vcc-0.5V
VOL Low-level output voltage IOL=2mA
II Input leakage current
VI =0 ~ S-Vcc
IO ^{Output leakage current}
S-CE=VIL or OE#=VIH, VI/O=0 ~ S-Vcc
Icc1 ^{Active supply current}
( AC,MOS level )
S-CE ₌ S-Vcc-0.2V
other inputs<= 0.2V or >= S-Vcc-0.2V
Output - open (duty 100%)
f= 10MHz
-
f= 1MHz
-
50
7
Active supply current
Icc2
( AC,TTL level )
S-CE=VIH
other pins =VIH or VIL
Output - open (duty 100%)
f= 10MHz
-
50
f= 1MHz
-
7
+70 ~ +85 C _-
-
0.6
0.4
±1
±1
70
15
70
15
40
Icc3
Stand by supply current
( AC,MOS level )
S-CE ^<= 0.2V
Other inputs=0~S-Vcc
-W
+40 ~ +70 C ^-
+25 ~ +40 C -
-
20
1 3.6
Units
V
mA
mA
mA
- 20 ~ +25 C -
0.3 1.2
Icc4 ^{Stand by supply current}
( AC,TTL level )
S-CE=VIL
Other inputs= 0 ~ S-Vcc
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for S-Vcc=3.0V and Ta=25 C
-
-
0.5
mA
* -3.0V in case of AC (Pulse width<= 30ns)
CAPACITANCE
Symbol ^Parameter
Conditions
CI
Input capacitance
CO Output capacitance
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Note: The value of common pins to SRAM is the sum of Flash Memory and SRAM.
(S-Vcc=2.7 ~ 3.6V, unless otherwise noted)
Limits
Min Typ Max
10
10
Units
pF
26
Sep. 1999 , Rev.2.0