M6MGB162S2BVP Datasheet, PDF (22/29 Pages) Mitsubishi Electric Semiconductor – 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

CLEAR PAGE BUFFER
START
WRITE 55H
WRITE D0H
PAGE BUFFER CLEAR
COMPLETED
SINGLE DATA LOAD TO PAGE BUFFER
START
WRITE 74H
WRITE
ADDRESS , DATA
DONE
NO
LOADING?
YES
SINGLE DATA LOAD
TO PAGE BUFFER
COMPLETED
PAGE BUFFER TO FLASH
START
WRITE 0EH
WRITE D0H
PAGE ADDRESS
STATUS REGISTER
READ
SR.7 = 1 ?
NO
NO
WRITE B0H ?
FULL STATUS CHECK
IF DESIRED
PAGE BUFFER TO FLASH
COMPLETED
22
YES
SUSPEND LOOP
WRITE D0H
YES
MITSUBISHI LSIs
M6MGB/T162S2BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
SUSPEND / RESUME FLOW CHART
START
WRITE B0H
SUSPEND
STATUS REGISTER
READ
SR.7 = 1?
NO
YES
SR.6 =1?
NO
YES
WRITE FFH
PROGRAM / ERASE
COMPLETED
READ ARRAY DATA
DONE
READING ?
YES
WRITE D0H
NO
RESUME
OPERATION
RESUMED
* The bank address is required when writing this command. Also, there is
no need to suspend the erase or program operation when reading data
from the other bank. Please use BGO function.
BLOCK ERASE FLOW CHART
START
WRITE 20H
WRITE D0H
BLOCK ADDRESS
STATUS REGISTER
READ
NO
SR.7 = 1 ?
NO
WRITE B0H ?
YES
FULL STATUS CHECK
IF DESIRED
BLOCK ERASE
COMPLETED
YES
SUSPEND LOOP
WRITE D0H
YES
Sep.1999 , Rev.2.0