RM25HG-24S_01 Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE

MITSUBISHI FAST RECOVERY DIODE MODULES
RM25HG-24S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Symbol
Parameter
VRRM
VR (DC)
Repetitive peak reverse voltage
Reverse DC voltage
Voltage class
24
1200
960
Symbol
IDC
IFSM
I^2t
Tj
Tstg
Parameter
DC current
Surge (non-repetitive) forward current
I^2t for fusing
Junction temperature
Storage temperature
Conditions
Resistive load, TC=80°C ➀, ➂ Collective of terminal
One half cycle at 60Hz, peak value ➀, ➂ Collective of terminal
Value for one cycle surge current
—
Mounting torque
Mounting screw M3
—
Weight
Typical value
Ratings
25
500
—
–40~+150
–40~+125
0.59~0.98
6~10
5
Unit
V
V
Unit
A
A
A²s
°C
°C
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
Tj=25/125°C, VRRM applied
Tj=25°C, IFM=100A, Instantaneous meas.
IFM=100A, Tj=25°C, di/dt=–500A/µs, VR=600V
Junction to case
Case to fin, conductive grease applied
Min.
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
Max.
0.1/1.0
4.0
0.3
—
0.5
0.5
Unit
mA
V
µs
µC
°C/ W
°C/ W
Sep.2001