RM100HA-XXF Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – HIGH SPEED SWITCHING USE INSULATED TYPE

MITSUBISHI DIODE MODULES
RM100HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Symbol
Parameter
12
VRRM
Repetitive peak reverse voltage
600
VDRM
Non-repetitive peak reverse voltage
720
VR (DC)
Reverse DC voltage
480
Voltage class
20
1000
1100
800
Symbol
IDC
IFSM
I^2t
Tj
Tstg
Viso
Parameter
DC output current
Surge (non-repetitive) forward current
I^2t for fusing
Junction temperature
Storage temperature
Isolation voltage
Conditions
Resistive load, TC=75°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
—
Mounting torque
Main terminal screw M4
Mounting screw M5
—
Weight
Typical value
24
1200
1350
960
Ratings
100
2000
16.7 × 10³
–40~150
–40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
Unit
A
A
A²s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
Repetitive reverse current
VFM
Forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
Rth (j-c)
Thermal resistance
Rth (c-f)
Contact thermal resistance
*¹ 12 class: VR=300V 20, 24 class: VR=600V
Tj=150°C, VRRM applied
Tj=25°C, IFM=100A, instantaneous meas.
IFM=100A, di/dt=–200A/µs, VR=300/600V*¹, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
Max.
20
1.5
0.8
60
0.5
0.15
Unit
mA
V
µs
µC
°C/ W
°C/ W
Feb.1999