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| RA60H1317M_10 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO | |||
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA60H1317M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=135-175MHz,
ZG=ZL=50â¦
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
75
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50â¦, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Pout Output Power
ηT
Total Efficiency
2fo
2nd Harmonic
Ïin
Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
â Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<70W (VGG control), Load VSWR=3:1
â
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=60W (VGG control),
Load VSWR=8:1
135
-
175
60
-
-
40
-
-
-
-
-25
-
-
3:1
-
1
-
No parasitic oscillation
MHz
W
%
dBc
â
mA
â
No degradation or destroy â
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M
2/9
25 Jun 2010
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