RA45H4452M Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – 440-520MHz 45W 12.5V MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=440-520MHz,
ZG=ZL=50Ω
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA45H4452M
RATING
17
6
100
55
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Pout Output Power
ηT
Total Efficiency
2fo
2^nd Harmonic
ρin
Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<55W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=45W (VGG control),
Load VSWR=20:1
440
520
45
35
-25
3:1
1
No parasitic oscillation
MHz
W
%
dBc
—
mA
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H4452M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002