RA30H4552M1 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – RF MOSFET MODULE 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA30H4552M1
MAXIMUM RATINGS (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
V_DD Drain Voltage
V_GG<5V, P_in=0W
V_GG Gate Voltage
V_DD<12.5V, P_in=50mW
P_in
P_out
T_case(OP)
Input Power
Output Power
Operation Case Temperature Range
f=450-520MHz,
V_GG<5V
T_stg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
45
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F
Frequency Range
P_out Output Power
V_DD=12.5V
ηT Total Efficiency
2f_o
2^nd Harmonic
V_GG=5V
P_in=50mW
ρ_in
Input VSWR
I_GG Gate Current
V_DD=0V, V_GG=5V, P_in=0W
I_DD Leakage Current
V_DD=17V, V_GG=0V, P_in=0W
— Stability
V_DD=10.0-15.2V, P_in=25-70mW,
5<P_out <40W (V_GG control), Load VSWR=3:1
—
Load VSWR Tolerance ^{VDD=15.2V, Pin=50mW,}
P_out=30W (V_GG control), Load VSWR=20:1
450
520 MHz
30
W
42
%
-40 dBc
3:1
—
1
mA
1
mA
No parasitic oscillation _—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4552M1
MITSUBISHI ELECTRIC
2/9
15^th Mar 2007