 English |
|
|
|
|
|
|
|
| RA30H4047M_10 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO | |||
| |||
| ◁ |
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA30H4047M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=400-470MHz,
ZG=ZL=50â¦
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
17
V
6
V
100
mW
45
W
-30 to +110
°C
-40 to +110
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50â¦, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f
Frequency Range
Pout Output Power
ηT
Total Efficiency
2fo
2nd Harmonic
Ïin
Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
â Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<40W (VGG control), Load VSWR=3:1
â
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1
400
-
470
30
-
-
40
-
-
-
-
-25
-
-
3:1
-
1
-
No parasitic oscillation
MHz
W
%
dBc
â
mA
â
No degradation or destroy â
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4047M
2/9
28 Jun 2010
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese