RA30H4047M1_10 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA30H4047M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V, Pin=0W
VGG Gate Voltage
VDD<12.5V, Pin=50mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=400-470MHz,
VGG<5V
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
45
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F
Frequency Range
Pout Output Power
VDD=12.5V
T Total Efficiency
2fo
2^nd Harmonic
VGG=5V
Pin=50mW
in
Input VSWR
IGG Gate Current
VDD=0V, VGG=5V, Pin=0W
IDD Leakage Current
VDD=17V, VGG=0V, Pin=0W
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <40W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance ^{VDD=15.2V, Pin=50mW,}
Pout=30W (VGG control), Load VSWR=20:1
400
-
470 MHz
30
-
-
W
42
-
-
%
-
-
-40 dBc
-
-
3:1
—
-
1
-
mA
-
-
1
mA
No parasitic oscillation _—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4047M1
2/9
25 Jun 2010