RA13H4452M_11 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

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RA13H4452M
RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (T_case=+25°C, unless otherwise specified)
SYMBOL PARAMETER
VDD
VGG
Pin
Pout
Tcase(OP)
Tstg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
VGG<5V
VDD<12.5V, Pin=0mW
f=440-520MHz,
ZG=ZL=50
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (T_case=+25°C, Z_G=Z_L=50, unless otherwise specified)
SYMBOL PARAMETER
f
Frequency Range
Pout Output Power
T
Total Efficiency
2fo
2^nd Harmonic
in
Input VSWR
IGG Gate Current
— Stability
— Load VSWR Tolerance
CONDITIONS
VDD=12.5V
VGG=5V
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
Pout<20W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=13W (VGG control),
Load VSWR=20:1
MIN TYP MAX
440
-
520
13
-
-
40
-
-
-
-
-30
-
-
3:1
-
1
-
No parasitic oscillation
UNIT
MHz
W
%
dBc
—
mA
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
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