QM30TX-HB Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
—
Mounting torque
Mounting screw M5
—
Weight
B(E) terminal screw M4
Typical value
Ratings
600
600
600
7
30
30
250
1.8
300
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
0.98~1.47
10~15
520
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
Parameter
Test conditions
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
VCE=600V, VEB=2V
Collector cutoff current
VCB=600V, Emitter open
Emitter cutoff current
VEB=7V, Collector open
Collector-emitter saturation voltage
IC=30A, IB=40mA
Base-emitter saturation voltage
Collector-emitter reverse voltage IC=–30A (diode forward voltage)
DC current gain
IC=30A, VCE=2.5V
Switching time
VCC=300V, IC=30A, IB1=60mA, –IB2=0.6A
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Min.
—
—
—
—
—
—
750
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
60
2.5
3.0
1.8
—
2.0
8.0
3.0
0.5
2.0
—
—
0.2
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/ W
°C/ W
°C/ W
Feb.1999