PS21962-ST Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-NU, NV, NW
450
V
VCC(surge) Supply voltage (surge)
Applied between P-NU, NV, NW
500
V
VCES
Collector-emitter voltage
600
V
±IC
±ICP
Each IGBT collector current
Each IGBT collector current (peak)
TC = 25°C
TC = 25°C, less than 1ms
5
A
10
A
PC
Collector dissipation
Tj
Junction temperature
TC = 25°C, per 1 chip
21.3
W
(Note 1)
–20~+125
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VDB
Parameter
Control supply voltage
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Ratings
Unit
Applied between VP1-VNC, VN1-VNC
20
V
Applied between VUFB-U, VVFB-V, VWFB-W
20
V
Applied between UP, VP, WP, UN, VN,
WN-VNC
–0.5~VD+0.5
V
Applied between FO-VNC
–0.5~VD+0.5
V
Sink current at FO terminal
Applied between CIN-VNC
1
mA
–0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(short circuit protection capability)
TC
Module case operation temperature
Tstg
Storage temperature
Viso
Isolation voltage
Condition
VD = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2: TC measurement point
IGBT chip position
FWD chip position
Control terminals
11.6mm
3mm
Power terminals
DIP-IPM
TC point
Heat sink side
Mar. 2007
2