PS11036 Datasheet, PDF (2/5 Pages) Powerex Power Semiconductors – Intellimod™ Module Application Specific IPM (30 Amperes/600 Volts)

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11036
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
P1
R
S
T
N1
UV Protection
P2
VD
UP
VP
WP
UN
VN
U
WN
V
FO
Fo Circuit
W
V(amp)
+–
GND
N2
(Fig. 2)
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
Symbol
VCC
VCC(surge)
VP or VN
VP(S) or
VN(S)
±Ic(±Icp)
Item
Supply voltage
Supply voltage (surge)
Each IGBT collector-emitter static voltage
Each IGBT collector-emitter switching
voltage
Each IGBT collector current
Condition
Applied between P2-N2
Applied between P2-N2, Surge-value
Applied between P2-U.V.W, U.V.W-N2
Applied between P2-U.V.W, U.V.W-N2
(Pulse)
TC = 25°C, “( )” means IC peak value
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I²t
Item
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I²t for fusing
Condition
3φ rectifying circuit
1 cycle at 60Hz, peak value non-repetitive
Value for one cycle of surge current
CONTROL PART
Symbol
VD, VDB
VCIN
VFO
IFO
Iamp
Item
Supply voltage
Input signal voltage
Fault output supply voltage
Fault output current
DC-Link IGBT current signal Amp output current
Ratings
Unit
450
V
500
V
600
V
600
V
±30 (±60)
A
Ratings
800
220
30
300
375
Unit
V
Vrms
A
A
A²s
Ratings
Unit
–0.5 ~ 20
V
–0.5 ~ +7.5
V
–0.5 ~ +7.5
V
15
mA
1
mA
Jan. 2000