PM50CL1B120 Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC Fo
VNC WN
VN1
VN
UN
1.5k
WP VWP1
VWPC WFO
VP
VVP1
VVPC VFO
UP VUP1
VUPC UFO
1.5k
1.5k
1.5k
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT
NC
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
VCES
±IC
Collector-Emitter Voltage
Collector Current
VD = 15V, VCIN = 15V
TC = 25°C
±ICP
Collector Current (Peak)
TC = 25°C
PC
Collector Dissipation
TC = 25°C
Tj
Junction Temperature
*: TC measurement point is just under the chip.
Ratings
Unit
1200
V
(Note-1)
50
A
100
A
(Note-1)
462
W
–20 ~ +150
°C
CONTROL PART
Symbol
Parameter
VD
Supply Voltage
VCIN
Input Voltage
VFO
Fault Output Supply Voltage
IFO
Fault Output Current
Condition
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
Sink current at UFO, VFO, WFO, FO terminals
Ratings
Unit
20
V
20
V
20
V
20
mA
May 2009
2