MGFS45V2527A Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

TYPICAL CHARACTERISTICS
P1dB,GLP vs. f
46
VDS=10(V)
IDS=6.5(A)
45
P1dB
44
GLP
43
42
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2527A
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
Po , P.A.E. vs. Pin
16
50
70
VDS=10 (V)
45
IDS=6.5(A)
f=2.6 (GHz)
15
40
Pout
60
50
14
35
30
13
25
12
20
40
P.A.E.
30
20
10
41
11
15
2.45
2.5
2.55
2.6
2.65
2.7
2.75
FREQUENCY f (GHz)
Po,IM3 vs. Pin
42
20
VDS=10(V)
IDS=6.5(A)
40 _{f1=2.700(GHz)}
Po
10
f2=2.705(GHz)
38
0
36
-10
34
-20
IM3
32
-30
30
-40
28
-50
26
-60
24
-70
14 16 18 20 22 24 26 28 30 32 34
INPUT POWER Pin (dBm S.C.L.)
S parameters
( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )
0
INPUT POWER (dBm)
f
(GHz)
2.40
2.42
2.44
2.46
2.48
2.50
2.52
2.54
2.56
2.58
2.60
2.62
2.64
2.66
2.68
2.70
2.72
2.74
2.76
2.78
2.80
S11
Magn. Angle(deg)
0.34
-172
0.35
-176
0.37
177
0.40
170
0.41
163
0.43
157
0.43
151
0.44
145
0.45
139
0.45
134
0.45
128
0.45
122
0.44
116
0.44
110
0.43
103
0.42
96
0.40
88
0.39
80
0.37
71
0.36
61
0.34
50
S-Parameter (TYP.)
S21
S12
Magn. Angle(deg) Magn. Angle(deg)
4.68
75
0.03
40
4.65
70
0.03
34
4.63
64
0.03
26
4.60
58
0.03
19
4.56
52
0.03
14
4.53
46
0.03
5
4.51
40
0.03
-1
4.49
34
0.04
-9
4.47
28
0.03
-15
4.44
22
0.04
-22
4.43
16
0.04
-29
4.42
10
0.04
-37
4.41
4
0.04
-42
4.40
-2
0.04
-50
4.40
-8
0.04
-55
4.39
-14
0.04
-62
4.37
-21
0.04
-70
4.37
-27
0.04
-74
4.35
-34
0.04
-79
4.34
-40
0.04
-88
4.32
-47
0.04
-95
S22
Magn. Angle(deg)
0.26
-48
0.26
-53
0.24
-57
0.24
-65
0.22
-69
0.21
-79
0.20
-81
0.20
-86
0.20
-91
0.20
-97
0.19
-104
0.19
-108
0.19
-113
0.19
-117
0.19
-120
0.18
-126
0.18
-128
0.17
-133
0.17
-136
0.16
-138
0.16
-141
MITSUBISHI
ELECTRIC
June-'04