M81731FP Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE HALF BRIDGE DRIVER

MITSUBISHI SEMICONDUCTORS <HVIC>
M81731FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Symbol
VB
VS
VBS
VOUT
VCC
VIN
PD
Kq
Rth(j-c)
Tj
Topr
Tstg
TL
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Output Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Solder heat-proof (reflow)
Test conditions
VB1 or VB2
VS1 or VS2
VBS1 = VB1-VS1 or
VBS2 = VB2-VS2
HO1 or HO2
IN1 or IN2
Ta = 25°C, On Board
Ta > 25°C, On Board
Pb Free
* Please adjust the VS potentian to 500V or less when the junction temperature (Tj) exceeds 125°C.
Ratings
–0.5 ~ 624
VB–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
–0.5 ~ 24
–0.5 ~ VCC+0.5
1.0
8.0
50
–20 ~ 150*
–20 ~ 125
–40 ~ 150
255:10s,max 260
Unit
V
V
V
V
V
V
W
mW/°C
°C/W
°C
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Test conditions
VB
High Side Floating Supply Absolute Voltage
VB1 or VB2
VS1 (VB1>10V)
VS
High Side Floating Supply Offset Voltage
or VS2 (VB2>10V)
VBS
High Side Floating Supply Voltage
VBS1 = VB1-VS1
or VBS2 = VB2-VS2
VOUT
High Side Output Voltage
HO1 or HO2
VCC
Low Side Fixed Supply Voltage
VIN
Logic Input Voltage
IN1 or IN2
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
Min.
VS+10
–5
10
VS
10
0
Limits
Typ.
—
—
—
—
—
—
Max.
Unit
VS+20
V
500
V
20
V
VB
V
20
V
7
V
1.2
1.0
0.8
0.6
0.4
0.2
00 _{25 50 75 100 125 150}
Temparature Ta (°C)
Aug. 2009
2