M63802P Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 300mA TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
M63802P
Collector current
(Current per 1 circuit M63802FP
IC
when 7 circuits are
coming on simulta- ^M63802GP
neously)
M63802KP
VIN
Input voltage
Test conditions
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Limits
Unit
min
typ
max
0
—
35
V
0
—
250
0
—
160
0
—
250
0
—
130
0
—
250
mA
0
—
120
0
—
250
0
—
120
0
—
30
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
VIN(on)
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
VCE = 10V, IC = 10mA
Limits
Unit
min
typ
max
35
—
—
V
—
—
0.2
V
—
—
0.8
13
19
23
V
50
—
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
140
—
ns
—
240
—
ns
NOTE 1 TEST CIRCUIT
INPUT
Vo
Measured device
RL
PG
OUTPUT
50Ω
CL
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TIMING DIAGRAM
50%
INPUT
OUTPUT
50%
ton
50%
50%
toff
Jan. 2000