M62001L Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – LOW POWER 2 OUTPUT SYSTEM RESET IC SERIES

MITSUBISHI<Dig.Ana.INTERFACE>
M62001L,FP/M62002L,FP/M62003L,FP/M62004L,FP/
M62005L,FP/M62006L,FP/M62007L,FP/M62008L,FP
LOW POWER 2 OUTPUT SYSTEM RESET IC SERIES
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise noted,These ratings commonly apply to the M62001L/FP~M62008L/FP.)
Symbol
Vcc
ISINK
Pd
K
Topr
Tstg
Parameter
Supply voltage
Output sink current
Power dissipation
Thermal derating
Operating temperature
Storage temperature
Conditions
(Ta≥25°C)
Ratings
8
5
440
4.4
-20 ~ +75
-40 ~ +125
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise noted,These ratings commonly apply to the M62001L/8L.)
Symbol
Parameter
Test conditions
Vs
Supply voltage
VBATT
∆Vs
ICC
Vsat1
Battery voltage
Hysteresis voltage
Circuit current
Sink ability
Vsat2
Source ability
td
tpw
tRESET
tINT
Delay time
Pulse width
Reset output response time
Interruption output reset time
Interruption level
during Vcc drop
(Equivalent to VSL)
(M62001,M62002,
M62005,M62006)
(M62003,M62004,
M62007,M62008)
Reset level at backup
∆Vs=VSH-VSL
Vcc=5.0V:In normal mode
Vcc=2.5V:In backup mode
Vcc=4V,Io=4mA
(Output saturation voltage of N-ch transistor)
Vcc=4V,Io=1mA
(Output saturation voltage of P-ch transistor:
[CMOS output] M62001,M62003,
M62005,M62007)
External capacitance Cd=0.33µF
Output pulse width (M62001,M62002,
M62003,M62004)
Time between Vcc(when falling)=VBATT and
output of RESET signal
Time between Vcc(when falling)=VS and
output of INT signal
Min.
4.30
Limits
Typ.
4.45
4.05
2.00
4.25
2.15
100
5.0
1.0
0.2
0.2
50
7
30
100
Max.
4.60
4.45
2.30
20
4
0.4
0.4
10
Unit
V
mA
mW
mW/°C
°C
°C
Unit
V
V
mV
µA
V
V
ms
µS
µS
µS
SUMMARY OF M62001L/FP~M62008L/FP
Type
M62001
M62002
M62003
M62004
M62005
M62006
Supply voltage detection level Vs(V) Battery voltage detection level VBATT(V)
4.45
4.25
2.15
4.45
M62007
4.25
M62008
Output form
CMOS
Open drain
CMOS
Open drain
CMOS
Open drain
CMOS
Open drain
Interruption signal output mode
Pulse output
Hold output
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