M54525AGP Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
Collector current _{Duty Cycle no more}
(Current per 1 cir- _{than 4%}
IC
cuit when 7 circuits
are coming on si- Duty Cycle no more
multaneously)
than 15%
VIH
“H” input voltage
VIL
“L” input voltage
Limits
Unit
min
typ
max
0
—
50
V
0
—
400
mA
0
—
200
17
—
0
—
25
V
6
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
II = 500µA, IC = 350mA
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 17V
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
Limits
Unit
min
typ
max
50
—
—
V
—
1.2
1.6
—
1.0
1.3
V
—
0.9
1.1
—
0.8
1.3
mA
—
1.3
2.0
V
—
—
100
µA
1000 2000
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
5
—
ns
—
100
—
ns
NOTE 1 TEST CIRCUIT
INPUT
Vo
PG
50Ω
Measured device
RL
OPEN
OUTPUT
CL
TIMING DIAGRAM
INPUT
50%
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 17V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
50%
50%
toff
Feb.2003