FT1500AU-240 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE

MITSUBISHI GENERAL USE THYRISTORS
FT1500AU-240
HIGH VOLTAGE, HIGH POWER, GENERAL USE
DYNAMIC GATE, PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth(j-f)
Parameter
Test conditions
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied
Tj = 125°C, ITM = 3000A, Instantaneous measument
Tj = 125°C, VD = 1/2VDRM
Tj = 25°C, VD = 6V, RL = 2Ω
Tj = 125°C, VD = 1/2VDRM
Tj = 25°C, VD = 6V, RL = 2Ω
Junction to fin
Min
—
—
—
2000
—
0.2
—
—
Limits
Typ
—
—
—
—
—
—
—
—
Max
1200
1200
4.0
—
2.5
—
350
0.005
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10⁵
7 Tj = 125°C
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
10²
7
5
3
VFGM = 20V
2
PFGM = 30W
10¹
7
PFG(AV) = 8W
5
3
VGT = 2.5V
2
IGT
10⁰
7
Tj = 125°C
5
25°C
3
– 40°C
2
VGD = 0.2V
IFGM = 6.0A
10^–1
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
RATED SURGE ON-STATE CURRENT
50
40
30
20
10
010_{0 2 3 5 7 101 2 3 5 7 102}
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
10⁰ 2 3 5 7 10¹
0.006
0.005
0.004
0.003
0.002
0.001
0
10^–3 2 3 5 710^–2 2 3 5 710^–1 2 3 5 7 10⁰
TIME (s)
Feb.1999