FS70SMJ-2 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS70SMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 35A, VGS = 10V
ID = 35A, VGS = 4V
ID = 35A, VGS = 10V
ID = 35A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω
IS = 35A, VGS = 0V
Channel to case
IS = 70A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
100
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
13
17
mΩ
—
14
18
mΩ
—
0.46 0.60
V
—
68
—
S
—
8200
—
pF
—
1150
—
pF
—
600
—
pF
—
54
—
ns
—
140
—
ns
—
830
—
ns
—
350
—
ns
—
1.0
1.5
V
—
—
0.83 °C/W
—
115
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
10²
tw = 10ms
7
5
3
100ms
2
10¹
7
5
3
2
10⁰
TC = 25°C
7
Single Pulse
5
1ms
10ms
DC
3
3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
23
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
40
PD = 150W
VGS = 10V
6V
5V
4V
3V
20
OUTPUT CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
Pulse Test
40
VGS = 10V
5V
4V
30
3.5V
3V
20
2.5V
10
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999