|
FS5SM-18A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
|
◁ |
MITSUBISHI Nch POWER MOSFET
FS5SM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V,
RGEN = RGS = 50â¦
IS = 2A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
900
â
â
V
±30
â
â
V
â
â
±10
µA
â
â
1
mA
2
3
4
V
â
2.15
2.80
â¦
â
4.30
5.60
V
3.0
5.0
â
S
â
1050
â
pF
â
100
â
pF
â
20
â
pF
â
20
â
ns
â
18
â
ns
â
110
â
ns
â
35
â
ns
â
1.0
1.5
V
â
â
1.0 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16
PD = 125W
TC = 25°C
Pulse Test
VGS = 20V
12
10V
8
5V
4
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
3
2
101
tw = 10ms
7
5
3
100ms
2
100
7
5
3
2
10â1
7
5
3
3
TC = 25°C
Single Pulse
5 7 101 2 3 5 7 102 2 3
1ms
10ms
100ms
DC
5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
VGS = 20V 10V
5V
4
TC = 25°C
Pulse Test
3
2
4.5V
1
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
|
▷ |