FS50SM-2 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
100
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
39
55
mΩ
—
0.98 1.38
V
—
33
—
S
—
2300
—
pF
—
410
—
pF
—
185
—
pF
—
35
—
ns
—
86
—
ns
—
100
—
ns
—
80
—
ns
—
1.0
1.5
V
—
—
1.78 °C/W
—
105
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
100
7V
80
MAXIMUM SAFE OPERATING AREA
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7 TC = 25°C
5 _{Single Pulse}
3
3
5 7 10⁰
23
5 7 10¹ 2 3
tw = 10ms
100ms
1ms
10ms
100ms
DC
5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 7V 6V
50
TC = 25°C
Pulse Test
40
60
6V
40
TC = 25°C
Pulse Test
20
5V
PD = 70W
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
30
20
5V
PD = 70W
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999