FS10VSJ-06 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
60
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
53
70
—
66
91
—
0.265 0.35
—
13
—
—
800
—
—
190
—
—
80
—
—
14
—
—
17
—
—
65
—
—
40
—
—
1.0
1.5
—
—
4.17
—
55
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10ms
2
10¹
7
5
100ms
3
2
1ms
10⁰
7
5
TC = 25°C
3
Single Pulse
2
10ms
DC
10^–1
7
5
23
5 7 10⁰ 2 3
5 7 10¹
23
5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20 _{Tc = 25°C}
Pulse Test
16 VGS = 10V
8V 6V
4V
PD = 30W
12
8
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 10V 8V 4V
6V
8
6
3V
4
3V
4
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2
Tc = 25°C
Pulse Test
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999