FS10ASJ-3 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS10ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
150
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
120
160
—
125
165
—
0.60 0.80
—
18
—
—
1800
—
—
180
—
—
85
—
—
17
—
—
23
—
—
150
—
—
75
—
—
1.0
1.5
—
—
3.57
—
90
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
10²
7
5
3
2
tw = 10ms
10¹
7
5
100ms
3
2
1ms
10⁰
7 _{TC = 25°C}
5 _{Single Pulse}
DC
10ms
3
2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³ 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 10V 5V 4V
TC = 25°C
Pulse Test
3V
8
OUTPUT CHARACTERISTICS
(TYPICAL)
5
VGS = 10V 5V 4V 3V
TC = 25°C
Pulse Test
4
2.5V
6
3
4
2
2
2V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1
2V
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999