CM75TL-24NF Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 87°C^*1
Pulse
Pulse
TC = 25°C
Conditions
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
MITSUBISHI IGBT MODULES
CM75TL-24NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1200
±20
75
150
75
150
520
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Unit
V
V
A
A
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V
6
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
Tj = 25°C
—
VCE(sat) Collector-emitter saturation voltage IC = 75A, VGE = 15V
Tj = 125°C
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 600V, IC = 75A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 600V, IC = 75A
—
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
tf
Turn-off fall time
RG = 4.2Ω, Inductive load switching operation
—
trr (Note 1) Reverse recovery time
IE = 75A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 75A, VGE = 0V
—
Rth(j-c)Q
IGBT part (1/6 module)^*1
—
Thermal resistance
Rth(j-c)R
FWDi part (1/6 module)^*1
—
Rth(c-f)
Contact thermal resistance Case to fin, Thermal compound Applied (1/6 module)^*2
—
RG
External gate resistance
4.2
*^{1 : Tc measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Limits
Typ.
—
7
—
2.1
2.4
—
—
—
338
—
—
—
—
—
3
—
—
—
0.085
—
Max.
1
8
0.5
3.0
—
11.5
1.0
0.23
—
100
50
300
350
120
—
3.8
0.24
0.36
—
63
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
Jun. 2004