CM600HU-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C)
Mounting Torque, M8 Main Terminal
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
CM600HU-12H
-40 to 150
-40 to 125
600
±20
600
1200*
600
1200*
1560
8.8~10.8
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
–
3.5~4.5
–
1.3~1.7
Weight
–
450
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
–
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
–
–
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 60mA, V_CE = 10V
4.5
6
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 600A, V_GE = 15V, T_j = 25°C
–
2.4
I_C = 600A, V_GE = 15V, T_j = 125°C
–
2.6
Total Gate Charge
Q_G
V_CC = 300V, I_C = 600A, V_GE = 15V
–
1200
Emitter-Collector Voltage*
V_EC
I_E = 600A, V_GE = 0V
–
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Input Capacitance
C_ies
–
–
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
–
–
Reverse Transfer Capacitance
C_res
–
–
Resistive
Load
Switch
Turn-on Delay Time
Rise Time
Turn-off Delay Time
t_d(on)
t_r
t_d(off)
V_CC = 300V, I_C = 600A,
V_GE1 = V_GE2 = 15V,
R_G = 1.0Ω, Resistive
–
–
–
–
–
–
Times
Fall Time
Diode Reverse Recovery Time
t_f
Load Switching Operation
–
–
t_rr
I_E = 600A, di_E/dt = -1200A/µs
–
–
Diode Reverse Recovery Charge
Q_rr
I_E = 600A, di_E/dt = -1200A/µs
–
1.44
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT Module
–
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi Module
–
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.02
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
52.8
28.8
7.8
300
600
350
300
160
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Max.
0.08
0.12
–
Units
°C/ W
°C/W
°C/W
Sep.1998