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CM600HA-5F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM600HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C)
Mounting Torque, M6 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
—
Mounting Torque, M6 Mounting
—
Mounting Torque, M4 Terminal
—
Weight
—
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 10V,
IC = 600A, VGE = 10V, Tj = 150°C
Total Gate Charge
QG
VCC = 100V, IC = 600A, VGE = 10V
Emitter-Collector Voltage
VEC
IE = 600A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VCC = 100V, IC = 600A,
VGE1 = VGE2 = 10V, RG = 4.2Ω,
Times
Fall Time
tf
Resistive Load
Diode Reverse Recovery Time
trr
IE = 600A, diE/dt = -1200A/µs
Diode Reverse Recovery Charge
Qrr
IE = 600A, diE/dt = -1200A/µs
CM600HA-5F
-40 to 150
-40 to 125
250
±20
600
1200
600
1200
960
1.96 ~ 2.94
1.96 ~ 2.94
0.98 ~ 1.47
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Min.
Typ. Max. Units
—
—
1.0
mA
—
—
0.5
µA
3.0
4.0
5.0
Volts
—
1.2
1.7** Volts
—
1.1
—
Volts
—
2200
—
nC
—
—
2.0
Volts
Min.
Typ. Max. Units
—
—
165
nF
—
—
7.5
nF
—
—
5.6
nF
—
—
1000
ns
—
—
4000
ns
—
—
1000
ns
—
—
500
ns
—
—
300
ns
—
9.5
—
µC
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Per IGBT
—
—
Rth(j-c)
Free Wheel Diode
—
—
Rth(c-f)
Per Module, Thermal Grease Applied
—
—
Max.
0.13
0.19
0.040
Units
°C/W
°C/W
°C/W
Sep.1998
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