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CM600HA-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM600HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M8 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
Mounting Torque, M6 Mounting
–
Mounting Torque, M4 Terminal
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM600HU-12H
-40 to 150
-40 to 125
600
±20
600
1200*
600
1200*
2100
8.83~10.8
1.96~2.94
0.98~1.47
560
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V
IC = 600A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG
VCC = 300V, IC = 600A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 600A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
Typ. Max. Units
–
–
1.0
mA
–
–
0.5
µA
4.5
6.0
7.5 Volts
–
2.1
2.8** Volts
–
2.15 –
Volts
–
1800
–
nC
–
–
2.8
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
–
VGE = 0V, VCE = 10V
–
–
–
VCC = 300V, IC = 600A,
–
VGE1 = VGE2 = 15V, RG = 1.0Ω
–
–
IE = 600A, diE/dt = –1200A/µs
–
IE = 600A, diE/dt = –1200A/µs
–
Typ.
–
–
–
–
–
–
–
–
1.62
Max.
60
21
12
350
700
350
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.06 °C/W
–
0.12 °C/W
–
0.035 °C/W
Sep.1998
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