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CM400HU-24H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM400HU-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ⤠150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M6 Main Terminal, M6 Mounting
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
â
-40 to 150
-40 to 125
1200
±20
400
800*
400
800*
2100
3.5~4.5
Mounting Torque, M4 Terminal
â
1.3~1.7
Weight
â
450
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
ICES
VCE = VCES, VGE = 0V
â
IGES
VGE = VGES, VCE = 0V
â
VGE(th)
IC = 40mA, VCE = 10V
4.5
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C
â
IC = 400A, VGE = 15V, Tj = 125°C
â
QG
VCC = 600V, IC = 400A, VGE = 15V
â
VEC
IE = 400A, VGE = 0V
â
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Typ.
â
â
6
2.9
2.85
1500
â
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Input Capacitance
Cies
â
â
Output Capacitance
Coes
VCE = 10V, VGE = 0V
â
â
Reverse Transfer Capacitance
Cres
â
â
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 400A,
â
â
Load
Switch
Rise Time
Turn-off Delay Time
tr
td(off)
VGE1 = VGE2 = 15V,
RG = 0.78â¦, Resistive
â
â
â
â
Times
Fall Time
tf
Load Switching Operation
â
â
Diode Reverse Recovery Time
trr
IE = 400A, diE/dt = -800A/µs
â
â
Diode Reverse Recovery Charge
Qrr
IE = 400A, diE/dt = -800A/µs
â
2.2
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
2
0.5
7.5
3.7
â
â
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
60
21
12
250
350
350
350
300
â
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Per IGBT Module
â
Rth(j-c)D
Per FWDi Module
â
Rth(c-f)
Per Module, Thermal Grease Applied
â
Typ.
â
â
0.02
Max.
0.06
0.09
â
Units
°C/W
°C/W
°C/W
Sep.1998
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