CM400HU-24F_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400HU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
G(E) Terminal M4 screw
Typical value
Ratings
1200
±20
400
800
400
800
1600
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
450
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
Max. ^Unit
—
—
2
mA
VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V
5
6
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance^*1
Contact thermal resistance
Thermal resistance
External gate resistance
±VGE = VGES, VCE = 0V
IC = 400A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 400A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 400A
VGE = ±15V
RG = 0.78Ω, Inductive load
IE = 400A
IE = 400A, VGE = 0V
IGBT part
FWDi part
Case to heat sink, Thermal compound applied^*2
Case temperature measured point is just under the chips
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.78
—
1.8
1.9
—
—
—
4400
—
—
—
—
—
23.6
—
—
—
0.02
—
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*^{1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
7
V
80
µA
2.4
—
V
160
6.8
nF
4.0
—
nC
300
100
600
ns
300
350
ns
—
µC
3.2
V
0.078
0.09
K/W
—
0.045*³
7.8
Ω
Feb. 2009
2