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CM400HA-28H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM400HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC =25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (TC =25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC =25°C)
Mounting Torque, M6 Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
Mounting Torque, M6 Mounting
–
Mounting Torque, M4 Terminal
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V
IC = 400A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG
VCC = 800V, IC = 400A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 400A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VCC = 800V, IC = 400A,
VGE1 = VGE2 = 15V, RG = 0.78Ω
Times
Fall Time
Diode Reverse Recovery Time
tf
trr
IE = 400A, diE/dt = –800A/µs
Diode Reverse Recovery Charge
Qrr
IE = 400A, diE/dt = –800A/µs
CM400HA-28H
–40 to 150
–40 to 125
1400
±20
400
800*
400
800*
2800
1.96 ~ 2.94
1.96 ~ 2.94
0.98 ~ 1.47
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
Min.
Typ.
Max. Units
–
–
2.0
mA
–
–
0.5
µA
5.0
6.5
8.0
Volts
–
3.1
4.2** Volts
–
2.95
–
Volts
–
2040
–
nC
–
–
3.8
Volts
Min.
Typ.
Max. Units
–
–
80
nF
–
–
28
nF
–
–
16
nF
–
–
300
ns
–
–
500
ns
–
–
350
ns
–
–
500
ns
–
–
300
ns
–
4.0
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.045 °C/W
–
0.09 °C/W
–
0.040 °C/W
Sep.1998
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