CM400DY-12NF_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC’ = 92°C^*3
Pulse
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
600
±20
400
800
400
800
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
Max. ^Unit
—
—
1
mA
VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V
5
6
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
VCE(sat) Collector-emitter saturation voltage IC = 400A, VGE = 15V
Tj = 25°C
—
Tj = 125°C
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 300V, IC = 400A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 300V, IC = 400A
—
td(off)
Turn-off delay time
VGE = ±15V
—
tf
Turn-off fall time
RG = 3.1Ω, Inductive load
—
trr (Note 1) Reverse recovery time
IE = 400A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 400A, VGE = 0V
—
Rth(j-c)Q _{Thermal resistance*1}
IGBT part (1/2 module)
—
Rth(j-c)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, Thermal compound Applied^*2 (1/2 module)
—
Rth(j-c’)Q Thermal resistance
Case temperature measured point is just under the chips
—
RG
External gate resistance
1.6
—
1.7
1.7
—
—
—
1600
—
—
—
—
—
6.8
—
—
—
0.04
—
—
*^{1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : Case temperature (Tc’) measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
7.5
V
0.5
µA
2.2
—
V
60
nF
7.3
nF
2.4
nF
—
nC
300
ns
200
ns
450
ns
300
ns
250
ns
—
µC
2.6
V
0.11 K/W
0.19 K/W
—
K/W
0.066^*3 K/W
16
Ω
Feb. 2009
2