CM400DU-24NFH_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400DU-24NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
PC’ (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
TC = 25°C
TC’ = 25°C^*4
Conditions
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
400
800
400
800
1040
2450
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
Unit
V
V
A
A
A
A
W
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
Max. ^Unit
—
—
1
mA
VGE(th) Gate-emitter threshold voltage IC = 40mA, VCE = 10V
4.5
6
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
Cies
Coes
Cres
Collector-emitter saturation voltage IC = 400A, VGE = 15V
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
Tj = 25°C
Tj = 125°C
—
5.0
—
5.0
—
—
—
—
—
—
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance^*1
Contact thermal resistance
Thermal resistance^*4
External gate resistance
VCC = 600V, IC = 400A, VGE = 15V
—
—
VCC = 600V, IC = 400A
—
VGE = ±15V
—
RG = 0.78Ω, Inductive load
—
IE = 400A
—
—
IE = 400A, VGE = 0V
—
IGBT part (1/2 module)
—
FWDi part (1/2 module)
—
Case to heat sink, Thermal compound Applied^*2 (1/2 module) —
IGBT part (1/2 module)
—
FWDi part (1/2 module)
—
0.78
1800
—
—
—
—
—
16
—
—
—
0.02
—
—
—
*^{1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
*^{4 : Case temperature (TC’) measured point is just under the chips.}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
7.5
V
1.4
µA
6.5
—
V
63
nF
5.3
nF
1.2
nF
—
nC
300
ns
100
ns
500
ns
150
ns
250
ns
—
µC
3.5
V
0.12 K/W
0.23 K/W
—
K/W
0.051^*3 K/W
0.093^{*3 K/W}
7.8
Ω
Feb. 2009
2