CM1800HC-34N_09 Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25°C
1700
V
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25°C
±20
V
IC
Collector current
ICM
TC = 75°C
Pulse
1800
A
(Note 1)
3600
A
IE (Note 2) _{Emitter current}
IEM (Note 2)
Pulse
1800
A
(Note 1)
3600
A
PC (Note 3) Maximum power dissipation TC = 25°C, IGBT part
10000
W
Tj
Junction temperature
–40 ~ +150
°C
Top
Operating temperature
–40 ~ +125
°C
Tstg
Storage temperature
–40 ~ +125
°C
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1min.
4000
V
Maximum short circuit pulse VCC = 1200V, VCES ≤ 1700V, VGE = 15V
tpsc
width
Tj = 125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Min
ICES
Collector cut-off current
VCE = VCES, VGE = 0V, Tj = 25°C
—
Gate-emitter
VGE(th)
threshold voltage
IC = 180mA, VCE = 10V, Tj = 25°C
6.0
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 1800A, VGE = 15V, Tj = 25°C
IC = 1800A, VGE = 15V, Tj = 125°C
(Note 4) —
(Note 4) —
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V, f = 100kHz
—
Cres
Reverse transfer capacitance ^{VGE = 0V, Tj = 25°C}
—
Qg
Total gate charge
VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C
—
VEC (Note 2) Emitter-collector voltage
IE = 1800A, VGE = 0V, Tj = 25°C
IE = 1800A, VGE = 0V, Tj = 125°C
(Note 4) —
(Note 4) —
td(on)
Turn-on delay time
VCC = 850V, IC = 1800A, VGE = ±15V
—
tr
Turn-on rise time
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
—
Eon
Turn-on switching energy
Inductive load
—
td(off)
Turn-off delay time
VCC = 850V, IC = 1800A, VGE = ±15V
—
tf
Turn-off fall time
RG(off) = 2.2Ω, Tj = 125°C, Ls = 100nH
—
Eoff
Turn-off switching energy
Inductive load
—
trr (Note 2) Reverse recovery time
—
Irr (Note 2) Reverse recovery current
VCC = 850V, IC = 1800A, VGE = ±15V
—
Qrr (Note 2) Reverse recovery charge
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
—
Erec (Note 2) Reverse recovery energy
Inductive load
—
Limits
Typ
—
7.0
—
2.15
2.40
264
14.4
4.2
10.2
2.60
2.30
1.00
0.40
550
1.20
0.30
560
1.00
720
420
280
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Unit
Max
6 mA
8.0
V
0.5 µA
2.80
—
V
—
nF
—
nF
—
nF
—
µC
3.30
V
—
—
µs
—
µs
— mJ/pulse
—
µs
—
µs
— mJ/pulse
—
µs
—
A
—
µC
— mJ/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005