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CM15TF-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Mounting
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 1.5mA, VCE = 10V
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V, Tj = 150°C
VCC = 300V, IC = 15A, VGE = 15V
IE = 15A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
CM15TF-12H
–40 to +150
–40 to +125
600
±20
15
30*
15
30*
100
1.47 ~ 1.96
150
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
Grams
Vrms
Min.
Typ.
Max. Units
–
–
1.0
mA
–
–
0.5
µA
4.5
6.0
7.5
Volts
–
2.1
2.8** Volts
–
2.15
–
Volts
–
45
–
nC
–
–
2.8
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VGE = 0V, VCE = 10V
VCC = 300V, IC = 15A,
VGE1 = VGE2 = 15V, RG = 42Ω
IE = 15A, diE/dt = –30A/µs
IE = 15A, diE/dt = –30A/µs
–
–
1.5
nF
–
–
0.5
nF
–
–
0.3
nF
–
–
120
ns
–
–
300
ns
–
–
200
ns
–
–
300
ns
–
–
110
ns
–
0.04
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
1.30 °C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
3.50 °C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.092 °C/W
Sep.1998
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