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CM150TF-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM150TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IR
IEM
Pc
–
Mounting Torque, M5 Mounting
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM150TF-12H
–40 to 150
–40 to 125
600
±20
150
300*
150
300*
600
1.47 ~ 1.96
1.47 ~ 1.96
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Current
ICES
IGES
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
–
–
1.0
mA
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
4.5
6.0
7.5 Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 150A, VGE = 15V
–
IC = 150A, VGE = 15V, Tj = 150°C
–
2.1
2.8** Volts
2.15 –
Volts
Total Gate Charge
QG
VCC = 300V, IC = 150A, VGE = 15V
–
450
–
nC
Emitter-Collector Voltage
VEC
IE = 150A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
–
–
2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
–
VGE = 0V, VCE = 10V
–
–
–
VCC = 300V, IC = 150A,
–
VGE1 = VGE2 = 15V, RG = 4.2Ω
–
–
IE = 150A, diE/dt = –300A/µs
–
IE = 150A, diE/dt = –300A/µs
–
Typ.
–
–
–
–
–
–
–
–
0.41
Max.
15
5.3
3
200
550
300
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)
Per IGBT
–
Rth(j-c)
Per FWDi
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.21 °C/W
–
0.47 °C/W
–
0.025 °C/W
Sep.1998
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