CM100E3U-12H_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
600
±20
100
200
100
200
400
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item
ICES
VGE(th)
Collector cutoff current
Gate-emitter
threshold voltage
Test Conditions
VCE = VCES, VGE = 0V
IC = 10mA, VCE = 10V
Limits
Min
Typ
—
—
4.5
6
IGES
Gate-leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 100A, VGE = 15V
Tj = 25°C
—
2.4
(Note 4) _{Tj = 125°C}
—
2.6
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 300V, IC = 100A, VGE = 15V
—
200
td (on)
Turn-on delay time
VCC = 300V, IC = 100A
—
tr
Turn-on rise time
VGE = ±15V
—
td (off)
Turn-off delay time
RG = 6.3Ω
—
tf
Turn-off fall time
Resistive load
—
VEC (Note 2) Emitter-collector voltage
IE = 100A, VGE = 0V
—
trr (Note 2) Reverse recovery time
IE = 100A
—
Qrr (Note 2) Reverse recovery charge
die / dt = –200A / µs
—
Rth(j-c)Q
Junction to case, IGBT part
—
Rth(j-c)R ^{Thermal resistance (Note 5)} Junction to case, FWDi part
—
VFM
Forward voltage
IF = 100A, Clamp diode part
—
trr
Reverse recovery time
IF = 100A
—
Qrr
Reverse recovery charge
die / dt = –200A / µs, Clamp diode part
—
Rth(j-c)
Thermal resistance (Note 5) Junction to case, Clamp diode part
—
Rth(c-f) Contact thermal resistance Case to heat sink, conductive grease applied (Note 6) —
—
—
—
—
—
—
0.24
—
—
—
—
0.24
—
0.07
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Unit
Max
1 mA
7.5
V
0.5 µA
3.0
—
V
8.8 nF
4.8 nF
1.3 nF
—
nC
100 ns
250 ns
200 ns
300 ns
2.6
V
160 ns
—
µC
0.31 K/W
0.7 K/W
2.6
V
160 ns
—
µC
0.7 K/W
—
K/W
Feb. 2009
2