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CM100DU-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM100DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM100DU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
2.5~3.5
Mounting Torque, M6 Mounting
–
3.5~4.5
Weight
–
310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
VCE = VCES, VGE = 0V
–
–
IGES
VGE = VGES, VCE = 0V
–
–
VGE(th)
IC = 10mA, VCE = 10V
4.5
6
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
–
2.4
IC = 100A, VGE = 15V, Tj = 125°C
–
2.6
QG
VCC = 300V, IC = 100A, VGE = 15V
–
200
VEC
IE = 100A, VGE = 0V
–
–
1
mA
0.5
µA
7.5
Volts
3.0
Volts
–
Volts
–
nC
2.6
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Cies
–
Output Capacitance
Coes
VCE = 10V, VGE = 0V
–
Reverse Transfer Capacitance
Cres
–
Resistive
Turn-on Delay Time
td(on)
VCC = 300V, IC = 100A,
–
Load
Switch
Rise Time
Turn-off Delay Time
tr
td(off)
VGE1 = VGE2 = 15V,
–
RG = 6.3Ω, Resistive
–
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
tf
Load Switching Operation
–
trr
IE = 100A, diE/dt = -200A/µs
–
Qrr
IE = 100A, diE/dt = -200A/µs
–
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
–
–
–
–
–
–
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module
–
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.035
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
Sep.1998
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