MH8S72BBFD-7 Datasheet, PDF (15/56 Pages) Mitsubishi Electric Semiconductor – 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

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MITSUBISHI LSIs
MH8S72BBFD-7, -8
603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Parameter
Symbol
Test Condition
Limits
(max) _Unit
-7, -8
operating current
one bank active (discrete)
Icc1 tRC=min.tCLK=min, BL=1, IOL=min
1015 ^mA
precharge stanby current
in power-down mode
precharge stanby current
in non power-down mode
active stanby current
in power-down mode
active stanby current
in non power-down mode
one bank active (discrete)
burst current
auto-refresh current
self-refresh current
Icc2P CKE=VILmax,tCLK=15ns
43 _mA
Icc2PS ^{CKE=CLK=VILmax(fixed)}
34 mA
Icc2N ^{CKE=/CS=VIHmin,tCLK=15ns(Note)}
Icc2NS ^{CKE=VIHmin,CLK=VILmax(fixed)}
223 mA
205 ^mA
Icc3P CKE=VILmax,tCLK=15ns
61 ^mA
Icc3PS ^{CKE=CLK=VILmax(fixed)}
43 ^mA
Icc3N ^{CKE=/CS=VIHmin,tCLK=15ns}
520 ^mA
Icc3NS ^{CKE=VIHmin,CLK=VILmax(fixed)}
385 ^mA
Icc4 ^{tCLK=min, BL=4, CL=3,IOL=0mAall banks active(discerte)} 1060 ^mA
Icc5 ^{tRC=min, tCLK=min}
1375 mA
Icc6 _{CKE <0.2V}
34 ^mA
Note:Input signals are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
VOH(DC) High-Level Output Voltage(DC)
VOL(DC) Low-Level Output Voltage(DC)
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)VOLI(iAC) _{LInopwu-tLCeuverrleOntutput Voltage(AC)}
IOH=-2mA
IOL=2mA
CQLf=lo5a0tipnFg, VO=0 ~ Vdd
ICVOILHH===50-02p~mFVA, _{dIOd+L=0.23mVA}
Limits
Min. Max. ^Unit
2.4
V
0.4 V
-52 5 ^uAV
-10 01.08 uAV
MIT-DS-0228-0.2
MITSUBISHI
ELECTRIC
29/Oct. /1998
15