MH32S72DBFA-6 Datasheet, PDF (15/56 Pages) Mitsubishi Electric Semiconductor – 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72DBFA -6
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vs s = 0V, unless otherwise noted)
Parameter Symbol
Test Condition
operating current
one bank activ e (discrete)
precharge stanby
current
in power-down mode
precharge stanby current
in non power-down mode
active stanby current
in non power-down mode
one bank activ e (discrete)
burst current
auto-refresh current
self-refresh current
Icc1 tRC=min.tCLK=min, BL=1,CL=3
Icc2P CKE=L,tCLK=15ns, /CS>Vcc-0.2V
Icc2PS CKE=CLK=L, /CS>Vcc-0.2V
Icc2N CKE=H,tCLK=15ns,VIH>Vcc-0.2V,VIL<0.2V
Icc2NS _{CKE=H,CLK=L,VIH>Vcc-0.2V,VIL<0.2V(f ixed)}
Icc3N CKE=H,tCLK=15ns
Icc3NS CKE=H,CLK=L
Icc4 ^{tCLK=min, BL=4, CL=3,all banks activ e(discerte)}
Icc5 tRC=min, tCLK=min
Icc6 _{CKE <0.2V}
Note)
1.Icc(max) is specif ied at the output open condition.
2.Input signals are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Limits
(max)
-6
1925
107
71
755
575
1115
935
2195
4715
71
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Symbol
Parameter
Test Condition
Limits
Min. Max. ^Unit
VOH(DC) High-Level Output Voltage(DC) IOH=-2mA
2.4
V
VOL(DC) Low-Level Output Voltage(DC) IOL=2mA
0.4 V
IOZ Off-stare Output Current
Q floating VO=0 ~ Vdd -10 10 uA
Ii ^{Input Current}
VIH=0 ~ Vdd+0.3V
-10 ₁₀ uA
MIT-DS-352-0.0
MITSUBISHI
ELECTRIC
30/Sep. /1999 15