M5M5Y5672TG-25 Datasheet, PDF (14/27 Pages) Mitsubishi Electric Semiconductor – 18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM

MITSUBISHI LSIs
M5M5Y5672TG – 25,22,20
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
VDD
Power Supply Voltage
-0.5*~2.5
VDDQ
VI
I/O Buffer Power Supply Voltage
Input Voltage
With respect to VSS
-0.5*~2.5
-0.5~VDDQ+0.5(≤2.5V max.) **
VO
Output Voltage
-0.5~VDDQ+0.5(≤2.5V max.) **
PD
Maximum Power Dissipation (VDD)
1072.5
TOPR
Operating Temperature
0~70
TSTG(bias) Storage Temperature(bias)
-10~85
TSTG
Storage Temperature
-65~150
Note24. * This is -1.0V~3.6V when pulse width≤2ns, and -0.5V~2.5V in case of DC.
** This is -1.0V~VDDQ+1.0V(≤3.6V max.) when pulse width≤2ns, and –0.5V~VDDQ+0.5V in case of DC.
Unit
V
V
V
V
mW
°C
°C
°C
DC ELECTRICAL CHARACTERISTICS
(1) Power Supplies
Symbol
Parameter
VDD
VDDQ
Power Supply Voltage
I/O Buffer Power Supply Voltage
Condition
Limits
Unit
Min
Max
1.70
1.95
V
1.70
1.95
V
(2) CMOS I/O DC Input Characteristics
Symbol
Parameter
Condition
Limits
Unit
Min
Max
VIH
High-level Input Voltage
0.65*VDDQ
VDDQ+0.3
V
VIL
Low-level Input Voltage
-0.3*
0.35*VDDQ
V
Note25. *VIL min is –1.0V and VIH max is VDDQ+1.0V(max. 3.6V) in case of AC (Pulse width ≤ 2ns).
(3) Input and Output Leakage Characteristics
Symbol
Parameter
Condition
Input Leakage Current
VI = 0V~VDDQ
IIL
(except EP2, EP3, LBO#, ZQ, MCH, MCL pins)
Input Leakage Current of
EP2, EP3, LBO#, ZQ, MCH, MCL pins
VI = 0V~VDDQ
IOL
Output Leakage Current
VI/O = 0V~VDDQ
Limits
Unit
Min
Max
10
µA
10
µA
10
µA
(4) Selectable Impedance Output Driver DC Electrical Characteristics
14
MITSUBISHI
ELECTRIC
Advanced Information
M5M5Y5672TG REV.0.1