RM50HG-12S_09 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH SPEED SWITCHING USE NON-INSULATED TYPE

RM50HG-12S
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
• IDC DC current .................................. 50A
• VRRM Repetitive peak reverse voltage
................ 600V
• trr
Reverse recovery time ............. 0.2µs
• ONE ARM
• Non-Insulated Type
APPLICATION
For snubber circuit (IPM or IGBT module)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
20.5MAX.
φ3.2±0.2
5±0.3
Non-Isolation side (metal) 4
2.5±0.3
1
2
3
4
1 23
1±0.2
5.45±0.5
2±0.3
5.45±0.5
0.6±0.2
Sep.2001