RM35HG-34S Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – Super Fast Recovery Diodes

RM35HG-34S
B
F
G - DIA.
D
A
K
L
C
J
1 23
M
E
E
H
N
1
2
3
4
Outline Drawing and Circuit Diagram
Dimension
Inches
Millimeters
A
1.102±0.02 26.0±0.5
B
0.81 Max. 20.5 Max.
C
0.79 Min. 20.0 Min.
D
0.24±0.008 6.0±0.2
E
0.214±0.012 5.45±0.3
F
0.20±0.012 5.0±0.3
G
0.214±0.012 Dia. Dia. 3.2±0.2
Dimension
H
J
K
L
M
N
Inches
0.12±0.012
0.10±0.012
0.10
0.08±0.012
0.04±0.008
0.02±0.008
Millimeters
3.0±0.3
2.5±0.3
2.5
2.0±0.3
1.0±0.2
0.6±0.2
Description:
Mitsubishi Super Fast Recovery
Diodes are designed for use in
applications requiring fast
switching.
Features:
ٗ Non-Isolated Package
ٗ Planar Chips
ٗ t_rr = 300ns Max.
Applications:
ٗ Snubber Circuits
Ordering Information:
Example: Select the complete part
number from the table below -i.e.
RM35HG-34S is a 1700V,
35 Ampere Super Fast Recovery
Single Diode Module.
Type
RM
Current Rating
Amperes
35
Voltage
Volts (x 50)
34
Sep.1998