RM1200DB-66S Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

High Voltage Diode Module
RM1200DB-66S
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
● IF ................................................................ 1200A
● VRRM ...................................................... 3300V
● Insulated Type
● 2-element in a Pack
● Copper Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
130
57 ±0.25
4-M8 NUTS
29.5
>PPS<
K1
C
K2
C
CM
A1
E
A2
C
E
G
61.5
18
E
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
K1 (C) K2 (C)
A1 (E) A2 (E)
CIRCUIT DIAGRAM
High Voltage Diode Module
1
May 2009